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- Transphorm is a global semiconductor company that develops gallium nitride (GaN) FETs for high-voltage power conversion applications. Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering the highest performance and highest reliability GaN devices and best-in-class applications-driven design support to a growing customer base. Transphorm is creating innovations that move beyond the limitations of silicon to capture 90% of today’s energy losses.
Meet some of the Revolutionaries inspired to create innovative systems using Transphorm GaN. Learn More
Design guides using High performing and reliable GaN Technology. Learn More
Learn about the wide-bandgap semiconductor material that achieves performance never before possible. Learn More
Design Resources
Explore an array of tools and resources from Transphorm to assist with GaN application design
TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs)
Transphorm's TP65H050WS and TP65H035WS Gen III GaN FETs feature increased noise immunity and increased gate reliability resulting in quiet switching.
TP65H035WS Cascode Gallium Nitride (GaN) FET
Transphorm's TP65H035WS cascode GaN FET offers superior reliability, performance, and improved efficiency over silicon.
TDTTP4000W066B-KIT 4 kW Totem-Pole PFC GaN Eval Board
Transphorm's 4 kW totem-pole power factor correction (PFC) GaN evaluation board is ideal for data center and broad industrial power supply applications.
TDTTP2500P100-KIT 2.5 kW Totem-Pole PFC GaN Eval Board
Transphorm's 2.5 kW bridgeless totem-pole power factor correction (PFC) GaN evaluation platform features the TPH3212PS 650 V 72 mΩ GaN FET.
TDHBG2500P100 2.5 kW Half-Bridge Evaluation Board
The TDHBG2500P100 half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 650 V GaN FETs.
GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies
Duration: 5 minutes
Overview of GaN versus Silicon Carbide in DC-DC hard switched synchronous boost converter, including a competitive analysis and PFC customer example.
Transphorms GaN FET versus e-Mode Introduction Presentation
This video is the high level introduction comparison of Transphorm's GaN FET technology against current e-mode technology in the market.
Publish Date: 2018-12-04
Transphorm GaN FET Quality and Reliability Presentation
This quality, reliability and lifetime testing presentation is part one of Transphorm's four part GaN FET video series
Reference Design 3300 W Bridgeless Totem Pole PFC Animation
This presentation is an overview of the 3.3 kW Bridgeless Totem-pole PFC reference design
AX1600i PSU Corsair upgraded power supply with Gallium Nitride
Publish Date: 2018-10-10
