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IRLB4030PBF N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB
Price & Procurement
6 639 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 2,89000 €2,89
10 2,43500 €24,35
25 2,29800 €57,45
100 1,96980 €196,98
500 1,75096 €875,48
1.000 1,49927 €1.499,27
2.500 1,44256 €3.606,39

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IRLB4030PBF

Datasheet
Digi-Key Part Number IRLB4030PBF-ND
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Manufacturer

Infineon Technologies

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Manufacturer Part Number IRLB4030PBF
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Description MOSFET N-CH 100V 180A TO220AB
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Manufacturer Standard Lead Time 39 Weeks
Detailed Description

N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB

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Customer Reference
Documents & Media
Datasheets IRLB4030PbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Featured Product HEXFET® Power MOSFETs
Data Processing Systems
PCN Design/Specification Mult Dev Label Chgs Aug/2020
PCN Assembly/Origin Mult Dev Wafer Site Chg 18/Dec/2020
PCN Packaging Tube Label Chgs 20/May/2020
HTML Datasheet IRLB4030PbF
Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 4,5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11360pF @ 50V
FET Feature -
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package 50
Other Names SP001552594