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STQ1HNK60R-AP N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
Price & Procurement
768 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 0,46000 0,46 €
10 0,39600 3,96 €
25 0,36920 9,23 €
100 0,27420 27,42 €
250 0,26044 65,11 €
500 0,21406 107,03 €
1 000 0,17398 173,98 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Box (TB)  : 497-15648-3-ND
  • Minimum Quantity: 2 000
  • Quantity Available: 0
  • Unit Price: 0,16585 €

STQ1HNK60R-AP

Datasheet
Digi-Key Part Number 497-15648-1-ND
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Manufacturer

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Manufacturer Part Number STQ1HNK60R-AP
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Description MOSFET N-CH 600V 400MA TO-92
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Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

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Documents & Media
Datasheets STx1(H)NK60(-1,R)
Other Related Documents STQ1HNK60R View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
EDA / CAD Models Download from Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Base Part Number STQ1
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 497-15648-1