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SI4840BDY-T1-E3 N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO
Price & Procurement
13 549 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,31000 1,31 €
10 1,16700 11,67 €
25 1,10680 27,67 €
100 0,83030 83,03 €
500 0,70370 351,85 €
1 000 0,57324 573,24 €

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Alternate Package
  • Tape & Reel (TR)  : SI4840BDY-T1-E3TR-ND
  • Minimum Quantity: 2 500
  • Quantity Available: 12 500 - Immediate
  • Unit Price: 0,59084 €
  • Digi-Reel®  : SI4840BDY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 13 549 - Immediate
  • Unit Price: Digi-Reel®

SI4840BDY-T1-E3

Datasheet
Digi-Key Part Number SI4840BDY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4840BDY-T1-E3
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Description MOSFET N-CH 40V 19A 8SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4840BDY
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
Video File MOSFET Technologies for Power Conversion
HTML Datasheet SI4840BDY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 12.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4840
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI4840BDY-T1-E3CT