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SI7157DP-T1-GE3 P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Price & Procurement
22 581 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,25000 1,25 €
10 1,11700 11,17 €
25 1,06040 26,51 €
100 0,79530 79,53 €
500 0,67408 337,04 €
1 000 0,54911 549,11 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI7157DP-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 21 000 - Immediate
  • Unit Price: 0,54154 €
  • Digi-Reel®  : SI7157DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 22 581 - Immediate
  • Unit Price: Digi-Reel®

SI7157DP-T1-GE3

Datasheet
Digi-Key Part Number SI7157DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7157DP-T1-GE3
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Description MOSFET P-CH 20V 60A PPAK SO-8
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Manufacturer Standard Lead Time 17 Weeks
Detailed Description

P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7157DP-T1-GE3
PCN Assembly/Origin Multiple Devices 11/Dec/2015
Video File
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 625nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 22000pF @ 10V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Part Number SI7157
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7157DP-T1-GE3CT