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SI7850DP-T1-GE3 N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8
Price & Procurement
15 190 In Stock
Can ship immediately
 

Quantity
All prices are in EUR.
Price Break Unit Price Extended Price
1 1,43000 1,43 €
10 1,28400 12,84 €
25 1,21160 30,29 €
100 0,94500 94,50 €
250 0,92080 230,20 €
500 0,79964 399,82 €
1 000 0,67847 678,47 €

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI7850DP-T1-GE3TR-ND
  • Minimum Quantity: 3 000
  • Quantity Available: 15 000 - Immediate
  • Unit Price: 0,66878 €
  • Digi-Reel®  : SI7850DP-T1-GE3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 15 190 - Immediate
  • Unit Price: Digi-Reel®

SI7850DP-T1-GE3

Datasheet
Digi-Key Part Number SI7850DP-T1-GE3CT-ND
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Manufacturer

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Manufacturer Part Number SI7850DP-T1-GE3
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Description MOSFET N-CH 60V 6.2A PPAK SO-8
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 60V 6.2A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

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Documents & Media
Datasheets SI7850DP
Video File MOSFET Technologies for Power Conversion
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names SI7850DP-T1-GE3CT