Qorvo

QPD1011A 7 W GaN RF Input-Matched Transistor

Qorvo wideband GaN-on-SiC HEMTs are designed for 30 MHz to 1,200 MHz RF applications

Image of Qorvo QPD1011A 7 W GaN RF Input-Matched TransistorThe Qorvo QPD1011A is a discrete GaN-on-SiC HEMT designed for RF power applications across 30 MHz to 1,200 MHz. It features an integrated input matching network for 50 Ω impedance, enabling simplified design and consistent performance. The device supports both CW and pulsed operation, making it suitable for demanding RF environments.

With a drain voltage of 50 V and typical output power of 8.7 W at 1 GHz, the QPD1011A delivers high efficiency and gain. Its low thermal resistance package ensures reliable operation under high power conditions. The compact 6 mm × 5 mm leadless SMT package is ideal for space-constrained designs such as handheld radios and radar systems.

Features
  • Frequency range: 30 MHz to 1,200 MHz
  • Output power (P3dB): 8.7 W at 1 GHz
  • Typical power-added efficiency (PAE): 60% at 1 GHz
  • Linear gain: ~21 dB
  • Operating voltage: 50 V, CW and pulse capable
  • Compact 6 mm × 5 mm leadless SMT package, RoHS compliant
Applications
  • Military and civilian radar systems
  • Land mobile and military radio communications
  • Wideband and narrowband RF power amplifiers
  • Test instrumentation requiring high linearity
  • Electronic countermeasure systems (jammers)

QPD1011A 7 W GaN RF Input-Matched Transistor

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
7W, 30-1200 MHZ, GAN RF INPUT-MAQPD1011ASR7W, 30-1200 MHZ, GAN RF INPUT-MA0 - Immediate$86.46Ver detalhes
7W, 30-1200 MHZ, GAN RF INPUT-MAQPD1011ATR77W, 30-1200 MHZ, GAN RF INPUT-MA0 - Immediate$61.53Ver detalhes

Evaluation Board

ImagemNúmero de peça do fabricanteDescriçãoTipoFrequênciaConteúdoAvailable QuantityPreçoVer detalhes
EVAL BOARD FOR 7W, 30-1200 MHZ,QPD1011AEVBEVAL BOARD FOR 7W, 30-1200 MHZ,Transistor100MHz a 1GHzPlacas0 - Immediate$719.79Ver detalhes
Published: 2025-12-08