SiRS5700DP N-Channel 150 V MOSFET

Vishay SiRS5700DP-T1-RE3 is a state-of-the-art N-channel MOSFET featuring TrenchFET® Gen V technology. This MOSFET is engineered to deliver exceptional performance with a very low R_DS(ON) and a high figure-of-merit (FOM), making it ideal for a wide range of power management applications. With a drain-source voltage (V_DS) of 150 V and a continuous drain current (I_D) of up to 144 A, the SiRS5700DP-T1-RE3 ensures efficient power conversion and minimal power loss. Its robust design includes 100% Rg and UIS testing, enhancing power dissipation and lowering thermal resistance (R_thJC). The PowerPAK® SO-8S package further optimizes thermal performance, making this MOSFET suitable for high-reliability applications. Whether used in synchronous rectification, DC/DC converters, or motor drive control, the SiRS5700DP-T1-RE3 offers unparalleled efficiency and reliability.