SiZF4800LDT Dual N-Channel 80 V MOSFET

Vishay's 80 V symmetric dual n-channel power MOSFET combines high- and low-side TrenchFET Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR 3x3FS package. For power conversion in industrial and telecom applications, Vishay's SiZF4800LDT increases power density and efficiency while enhancing thermal performance, reducing component counts, and simplifying designs. The dual MOSFET can be used in place of two discrete devices in the PowerPAK 1212 package saving 50% of board space. Typical on-resistance at 4.5 V for the SiZF4800LDT is 25% lower than the previous-generation device in the PowerPAIR 3x3FS and 16% lower than the closest competing device in the same package dimensions. The MOSFET’s flip-chip technology provides 43% lower thermal resistance compared to devices in the PowerPAIR 3x3FS. A unique pin configuration enables a simplified PCB layout and supports shortened switching loops to minimize parasitic inductance.