Name: IPD65R1K4C6ATMA1
Brand: Infineon Technologies
SKU: 448-IPD65R1K4C6ATMA1TR-ND
Price: 1.4268 EUR
Availability: InStock

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IPD65R1K4C6ATMA1
DigiKey Part Number	448-IPD65R1K4C6ATMA1TR-ND - Tape & Reel (TR) 448-IPD65R1K4C6ATMA1CT-ND - Cut Tape (CT) 448-IPD65R1K4C6ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPD65R1K4C6ATMA1
Description	MOSFET N-CH 650V 3.2A TO252-3
Customer Reference
Detailed Description	N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3
Datasheet	Datasheet
EDA/CAD Models	IPD65R1K4C6ATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 100µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Series CoolMOS™ C6	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V
Part Status Last Time Buy	Power Dissipation (Max) 28W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO252-3
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)	Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPD65R1
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V