Name: IPI086N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPI086N10N3GXKSA1-ND
Price: 2.5338 EUR
Availability: InStock

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IPI086N10N3GXKSA1
DigiKey Part Number	IPI086N10N3GXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPI086N10N3GXKSA1
Description	MOSFET N-CH 100V 80A TO262-3
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
Datasheet	Datasheet
EDA/CAD Models	IPI086N10N3GXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 75µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V
Part Status Active	Power Dissipation (Max) 125W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 100 V	Supplier Device Package PG-TO262-3
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V	Base Product Number IPI086
Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V

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