SI2308BDS-T1-E3 is Obsolete and no longer manufactured.
Available Substitutes:

Direct


Vishay Siliconix
In Stock: 266
Unit Price: 0,81000 €

MFR Recommended


Vishay Siliconix
In Stock: 30 040
Unit Price: 0,52000 €
Datasheet

Similar


onsemi
In Stock: 18 584
Unit Price: 0,42000 €
Datasheet

Similar


Rohm Semiconductor
In Stock: 4 168
Unit Price: 0,74000 €
Datasheet

Similar


Rohm Semiconductor
In Stock: 5 384
Unit Price: 0,87000 €
Datasheet

Similar


Rohm Semiconductor
In Stock: 3 849
Unit Price: 1,05000 €
Datasheet

Similar


Rohm Semiconductor
In Stock: 5 304
Unit Price: 0,91000 €
Datasheet
SI2333DS-T1-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SI2308BDS-T1-E3

DigiKey Part Number
SI2308BDS-T1-E3TR-ND - Tape & Reel (TR)
SI2308BDS-T1-E3CT-ND - Cut Tape (CT)
SI2308BDS-T1-E3DKR-ND - Digi-Reel®
Manufacturer
Manufacturer Product Number
SI2308BDS-T1-E3
Description
MOSFET N-CH 60V 2.3A SOT23-3
Customer Reference
Detailed Description
N-Channel 60 V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Part Status
Obsolete
FET Type
Technology
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.09W (Ta), 1.66W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
Base Product Number
Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

Obsolete
This product is no longer manufactured. View Substitutes