Name: SI2318CDS-T1-GE3
Brand: Vishay Siliconix
SKU: SI2318CDS-T1-GE3TR-ND
Price: 0.6519 EUR
Availability: OutOfStock

SI2318CDS-T1-GE3
cms-digikey-product-number	SI2318CDS-T1-GE3TR-ND - Tape & Reel (TR) SI2318CDS-T1-GE3CT-ND - Cut Tape (CT) SI2318CDS-T1-GE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SI2318CDS-T1-GE3
cms-description	MOSFET N-CH 40V 5.6A SOT23-3
cms-standard-lead-time	45 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 40 V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
cms-datasheet	cms-datasheet

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2318

Unit Price without VAT:	0,53000 €
Unit Price with VAT:	0,65190 €

SI2318CDS-T1-GE3