Name: SIHB11N80AE-GE3
Brand: Vishay Siliconix
SKU: 742-SIHB11N80AE-GE3-ND
Price: 3.2595 EUR
Availability: InStock

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SIHB11N80AE-GE3
DigiKey Part Number	742-SIHB11N80AE-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB11N80AE-GE3
Description	MOSFET N-CH 800V 8A D2PAK
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 8A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet
EDA/CAD Models	SIHB11N80AE-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Series E	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 804 pF @ 100 V
Part Status Active	Power Dissipation (Max) 78W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 800 V	Supplier Device Package TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C 8A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number SIHB11
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V

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In-Stock: 699

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Tube

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Unit Price without VAT:	2,65000 €
Unit Price with VAT:	3,25950 €

SIHB11N80AE-GE3