Diodes Incorporated

DMHC10H170SFJ MOSFET H-Bridge Shrinks Footprint

Diodes' MOSFET H-bridges co-package two nMOS and two pMOS that can replace four single devices or two sets of complementary devices

Image of Diodes' DMHC10H170SFJ MOSFET H-bridge Shrinks FootprintDiodes Incorporated has extended its family of dedicated MOSFET H-bridges with the DMHC10H170SFJ, designed for space limited ultrasonic transducer arrays, DC motor driving, and inductive wireless charging circuits.

Providing the industry’s smallest 100 V H-bridge in a footprint of only 5 mm x 4.5 mm, this device can replace four SOT23 or two SO-8 packages to save PCB space. This enables smaller array designs in the driving of ultrasonic transducers for phased array industrial inspection and marine sonar systems.

Features
  • Reduce footprint
    • In the DFN5045 package with a 5 mm x 4.5 mm footprint, these H-bridges save PCB space and reduce component count and assembly costs
  • Max drain voltage
    • 100 V VDSS provides sufficient headroom for the intended 48 V rails
  • High pulsed current
    • 11 A peak pulse capability allows for a high in-rush current to be drawn safely during the start-up of the inductive load
  • Logic level drive
    • 5 V gate drive allowing direct interface with MCU logic level signals
Applications
  • Ultrasonic transducer arrays for marine echo-location systems
  • Phased array ultrasonics for material flaw inspection in manufacturing
  • DC motors in telecoms 48 V fan driving

DMHC10H170SFJ MOSFET H-Bridge

ImagemNúmero de peça do fabricanteDescriçãoCaracterística FETTensão dreno-fonte (Vdss)Available QuantityPreçoVer detalhes
MOSFET 2N/2P-CH 100V 2.9A 12VDFNDMHC10H170SFJ-13MOSFET 2N/2P-CH 100V 2.9A 12VDFN-100V3403 - Immediate$1.57Ver detalhes
Published: 2016-01-20