Littelfuse Inc

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E Series

Littelfuse offers the enhancement-mode SiC MOSFET, 1200 V, N-channel LSIC1MO120E series

Image of Littelfuse's Silicon Carbide (SiC) Ultra-Fast Switching MOSFET - LSIC1MO120E0080 SeriesLittelfuse's SiC MOSFET LSIC1MO120E series provides a combination of low on-resistance and ultra-low switching losses unavailable with traditional 1200 V class power transistors. The robust design of this first SiC MOSFET accommodates a wider range of high temperature applications. Smaller heat sinks and increased power density create a higher efficiency and smaller passive filter and increased power density create higher switching frequencies. The device has a smaller die size per voltage/current rating.

State of the SiC MOSFET: Device Evolution, Technology Merit, and Commercial Prospects

Features
  • Ultra-fast switching speeds
  • Lower switching losses
  • High temperature operation
  • High blocking voltages and low specific on-resistance (SiC material properties)
Applications
  • Power conversion systems
  • Solar inverters
  • Switch mode power supplies
  • UPS systems
  • Motor drives
  • High voltage DC/DC converters
  • Battery chargers

Silicon Carbide (SiC) Ultra-Fast Switching MOSFET

ImagemNúmero de peça do fabricanteDescriçãoTensão dreno-fonte (Vdss)Corrente - Dreno contínuo (Id) a 25°CAvailable QuantityPreçoVer detalhes
SICFET N-CH 1200V 39A TO247-3LSIC1MO120E0080SICFET N-CH 1200V 39A TO247-31200 V39A (Tc)359 - Immediate$17.71Ver detalhes
SICFET N-CH 1200V 20A TO247-3LSIC1MO120E0160SICFET N-CH 1200V 20A TO247-31200 V20A (Tc)26 - Immediate
1350 - Factory Stock		$9.55Ver detalhes
Published: 2018-01-05

Related Videos

1200 V, 80 mOhm SiC MOSFET
1200 V, 80 mOhm SiC MOSFET

Publish Date: 2019-07-24

Littelfuse LSIC1MO120E0080 Mosfet | DigiKey Daily
Littelfuse LSIC1MO120E0080 Mosfet | DigiKey Daily

Publish Date: 2018-02-08

Related Product Highlight

Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs - LSIC1MO Series Littelfuse's LSIC1MO series MOSFET's device structure enables lower per-cycle switching losses and improved light load efficiency than similarly rated IGBTs.
SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit IXYS, a Littelfuse Technology, has developed a gate driver evaluation board for silicon carbide MOSFETs and diodes.
Power Semiconductor - Silicon Carbide (SiC) Silicon Carbide (SiC) devices have the potential to revolutionize today’s power electronics; featuring fast switching times, high blocking voltage capabilities & the ability to operate at high temperatures.

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