Transphorm

TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs)

Transphorm's GaN FETs feature quieter switching by reducing electromagnetic interference (EMI) and increasing noise immunity

Image of Transphorm's TP65H050WS/TP65H035WS GaN FETsTransphorm's TP65H050WS and TP65H035WS are Gen III 650 V GaN FETs. They yield lower EMI, increased gate noise immunity, and greater headroom in circuit applications. The 50 mΩ TP65H050WS and the 35 mΩ TP65H035WS are available in standard TO-247 packages.

A MOSFET and design modifications enable the Gen III devices to deliver an increased threshold voltage (noise immunity) to 4 V from 2.1 V (Gen II) which eliminates the need for a negative gate drive. The gate reliability increased from Gen II by 11% up to ±20 V maximum. This results in quieter switching and the platform delivers performance improvement at higher current levels with simple external circuitry.

Seasonic Electronics Company's 1600T is a 1600 W, bridgeless totem-pole platform that uses these high voltage GaN FETs to bring 99% power factor correction (PFC) efficiency in battery chargers (e-scooters, industrial, and more), PC power, servers, and gaming markets. The benefits of using these FETs with the silicon-based platform 1600T include increased efficiency by 2% and increased power density by 20%.

The 1600T platform employs Transphorm’s TP65H035WS to achieve increased efficiency in hard- and soft-switched circuits and provide users options when designing power system products. The TP65H035WS pairs with commonly-used gate drivers to simplify designs.

Features
  • JEDEC qualified GaN technology
  • Robust design:
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient overvoltage capability
  • Dynamic RDS(on)eff production tested
  • Very low QRR
  • Reduced crossover loss
  • RoHS compliant and halogen-free packaging
Benefits
  • Enables alternating current/direct current (AC/DC) bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
  • Improves efficiency/operation frequencies over Si
  • Easy to drive with commonly used gate drivers
  • GSD pin layout improves high speed design
Applications
  • Datacom
  • Broad industrial
  • PV inverters
  • Servo motors

TP65H050WS and TP65H035WS GaN FETs

ImagemNúmero de peça do fabricanteDescriçãoTensão de acionamento (Max Rds On, Min Rds On)Rds on (máx.) para Id, VgsVgs(th) (máx.) para IdAvailable QuantityPreçoVer detalhes
GANFET N-CH 650V 34A TO247-3TP65H050WSGANFET N-CH 650V 34A TO247-312V60mOhm a 22A, 10V4,8V a 700µA450 - Immediate$16.20Ver detalhes
GANFET N-CH 650V 46.5A TO247-3TP65H035WSGANFET N-CH 650V 46.5A TO247-312V41mOhm a 30A, 10V4,8V a 1mA0 - Immediate$19.06Ver detalhes

Evaluation Boards

ImagemNúmero de peça do fabricanteDescriçãoSaídas e tipoTensão - SaídaCorrente - SaídaAvailable QuantityPreçoVer detalhes
EVAL BOARD FOR TP65H035WSTDTTP4000W066B-KITEVAL BOARD FOR TP65H035WS1 saída não isolada390V15A0 - ImmediateSee Page for PricingVer detalhes
EVAL BOARD FOR TP65H050WSTDINV3000W050-KITEVAL BOARD FOR TP65H050WS1 saída não isolada-22A0 - ImmediateSee Page for PricingVer detalhes
Published: 2018-11-15

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