VideoLibrary

EPC 2024 electronica interview: GaN and the future of untethered robots

At electronica 2024, in the DigiKey booth, Caitlin Gittins speaks with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future.

1/29/2025 4:20:24 PM

DC/DC & AC/DC (Off-Line) SMPS Evaluation Boards

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
DCDC 48-12V/DUAL PHASE BUCK CONVEPC9158DCDC 48-12V/DUAL PHASE BUCK CONV29 - Immediate$416.55Ver detalhes
DCDC 500W DUAL PH/SYNCBOOST CONVEPC9166DCDC 500W DUAL PH/SYNCBOOST CONV19 - Immediate$416.55Ver detalhes
EVAL BOARD FOR DSPIC33CK32MP102EPC9143KITEVAL BOARD FOR DSPIC33CK32MP10210 - Immediate$416.55Ver detalhes

Evaluation and Demonstration Boards and Kits

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
EVAL BOARD FOR EPC2302, EPC23101EPC90142EVAL BOARD FOR EPC2302, EPC2310130 - Immediate$170.73Ver detalhes
EVAL BOARD FOR EPC2218EPC90123EVAL BOARD FOR EPC221826 - Immediate$170.73Ver detalhes
EVAL BOARD FOR EPC2207EPC90124EVAL BOARD FOR EPC220720 - Immediate$170.73Ver detalhes

FET, MOSFET Arrays

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
MOSFET 2N-CH 100V 1.7A DIEEPC2106MOSFET 2N-CH 100V 1.7A DIE13730 - Immediate$2.30Ver detalhes
MOSFET 2N-CH 80V 28A DIEEPC2103MOSFET 2N-CH 80V 28A DIE5072 - Immediate$9.29Ver detalhes
MOSFET 3N-CH 100V 9BGAEPC2107MOSFET 3N-CH 100V 9BGA4982 - Immediate$2.45Ver detalhes

Power Management (PMIC)

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
IC GAN LASER DRVR 80VEPC21701IC GAN LASER DRVR 80V34410 - Immediate$2.88Ver detalhes
IC GATE DRVR HALF-BRIDGE 12WLCSPUP1966EIC GATE DRVR HALF-BRIDGE 12WLCSP220528 - Immediate$1.97Ver detalhes
IC LASER DRVER 40V 10A 3.3VLOGICEPC21601IC LASER DRVER 40V 10A 3.3VLOGIC13802 - Immediate$2.51Ver detalhes

Single FETs, MOSFETs

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
GANFET N-CH 80V 1.7A DIEEPC2203GANFET N-CH 80V 1.7A DIE33060 - Immediate$1.27Ver detalhes
GANFET NCH 15V 3.4A DIEEPC2040GANFET NCH 15V 3.4A DIE18181 - Immediate$1.51Ver detalhes
GANFET N-CH 100V 1.7A DIEEPC2051GANFET N-CH 100V 1.7A DIE59370 - Immediate$1.61Ver detalhes

Related Videos

EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey
EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey

Publish Date: 2025-02-20

GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit
GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit

Publish Date: 2023-09-19

Gallium Nitride Reliability in Real-World DC-DC Applications
Gallium Nitride Reliability in Real-World DC-DC Applications

Publish Date: 2023-08-31

Related Product Highlight

EPC91107KIT + EPC91110KIT 5 kW GaN AC to 48 V/50 V Reference Solution The EPC EPC91107KIT + EPC91110KIT 5 kW GaN AC to 48 V/50 V reference solution is powered by GaN; EPC2304 (200 V, 5 mΩ) in PFC and EPC2305 (150 V, 3 mΩ) in LLC.
EPC23102 ePower™ Stage IC The EPC EPC23102 ePower™ stage IC offers higher performance and a smaller solution size for high-power-density applications.
EPC91109 180 W GaN Buck Converter Evaluation Board The EPC91109 ultra-compact evaluation board from EPC is ideal for USB PD 3.1, laptops, battery-powered equipment, and portable electronics up to 180 W.

Related Articles and Blogs

Webinar – Maximum Efficiency and Power: GaN This webinar introduces a series of joint GaN based reference designs featuring unmatched power output, thermal efficiency, and reduced board space.
Compreendendo o papel dos acionadores, comutadores e diodos laser para um desempenho LiDAR eficaz Os componentes eletro-ópticos estão no centro do LiDAR, que utiliza pulsos de laser para criar uma "nuvem de pontos" tridimensional do ambiente circundante.
Webinar – Unlocking the Power of GaN Learn how to incorporate high power density GaN technology into your applications in this webinar.

Related Product Training Modules

eGaN Integrated GaN Power eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
eGaN® FET Reliability Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.