VideoLibrary

EPC 2024 electronica interview: GaN and the future of untethered robots

At electronica 2024, in the DigiKey booth, Caitlin Gittins speaks with Alex Lidow, CEO, EPC about GaN and the future of untethered robots. The discussion touches on the concept of humanoid robots, contrasting them with conventional robotic arms, and EPC’s outlook on robotics’ future.

1/29/2025 4:20:24 PM

DC/DC & AC/DC (Off-Line) SMPS Evaluation Boards

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
DCDC 48-12V/DUAL PHASE BUCK CONVEPC9158DCDC 48-12V/DUAL PHASE BUCK CONV24 - Immediate$412.98Ver detalhes
DCDC 500W DUAL PH/SYNCBOOST CONVEPC9166DCDC 500W DUAL PH/SYNCBOOST CONV10 - Immediate$412.98Ver detalhes
EVAL BOARD FOR DSPIC33CK32MP102EPC9143KITEVAL BOARD FOR DSPIC33CK32MP1025 - Immediate$412.98Ver detalhes

Evaluation and Demonstration Boards and Kits

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
EVAL BOARD FOR EPC2302, EPC23101EPC90142EVAL BOARD FOR EPC2302, EPC2310119 - Immediate$169.26Ver detalhes
EVAL BOARD FOR EPC2218EPC90123EVAL BOARD FOR EPC221825 - Immediate$169.26Ver detalhes
EVAL BOARD FOR EPC2207EPC90124EVAL BOARD FOR EPC220716 - Immediate$169.26Ver detalhes

FET, MOSFET Arrays

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
MOSFET 2N-CH 100V 1.7A DIEEPC2106MOSFET 2N-CH 100V 1.7A DIE22500 - Immediate$2.28Ver detalhes
MOSFET 2N-CH 80V 28A DIEEPC2103MOSFET 2N-CH 80V 28A DIE8040 - Immediate$9.21Ver detalhes
MOSFET 3N-CH 100V 9BGAEPC2107MOSFET 3N-CH 100V 9BGA4981 - Immediate$2.43Ver detalhes

Power Management (PMIC)

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
IC GAN LASER DRVR 80VEPC21701IC GAN LASER DRVR 80V33509 - Immediate$2.85Ver detalhes
IC GATE DRVR HALF-BRIDGE 12WLCSPUP1966EIC GATE DRVR HALF-BRIDGE 12WLCSP196743 - Immediate$1.95Ver detalhes
IC LASER DRVER 40V 10A 3.3VLOGICEPC21601IC LASER DRVER 40V 10A 3.3VLOGIC10548 - Immediate$2.49Ver detalhes

Single FETs, MOSFETs

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
GANFET N-CH 80V 1.7A DIEEPC2203GANFET N-CH 80V 1.7A DIE26534 - Immediate$1.26Ver detalhes
GANFET NCH 15V 3.4A DIEEPC2040GANFET NCH 15V 3.4A DIE35217 - Immediate$1.50Ver detalhes
GANFET N-CH 100V 1.7A DIEEPC2051GANFET N-CH 100V 1.7A DIE59018 - Immediate$1.59Ver detalhes

Related Videos

EPC23102 ePower Stage IC from EPC PIO | DigiKey
EPC23102 ePower Stage IC from EPC PIO | DigiKey

Publish Date: 2026-02-11

EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey
EPC EPC2152 Integrated ePower Stage Single-Chip Driver PIO | DigiKey

Publish Date: 2025-02-20

GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit
GaN Experts unbox a Gallium Nitride (GaN) Powered Motor Drive Evaluation Kit

Publish Date: 2023-09-19

Related Product Highlight

FirePower™ Laser Firing System ICs Silanna FirePower™ laser firing system ICs features up to 10 MHz rep rate limited by temperature rise in laser and other board components.
EPC GaN Power Devices EPC GaN power devices enable fast switching, higher power density, and improved efficiency in modern power electronics. Available at DigiKey for applications including data centers, EVs, consumer power, and industrial systems.
EPC91104 3-Phase Motor Drive Inverter The EPC EPC91104 is a 3-phase BLDC motor drive inverter board featuring the EPC23104 ePower Stage IC 11 mΩ maximum RDS(ON), 100 V maximum device voltage.

Related Articles and Blogs

Webinar – Maximum Efficiency and Power: GaN This webinar introduces a series of joint GaN based reference designs featuring unmatched power output, thermal efficiency, and reduced board space.
Compreendendo o papel dos acionadores, comutadores e diodos laser para um desempenho LiDAR eficaz Os componentes eletro-ópticos estão no centro do LiDAR, que utiliza pulsos de laser para criar uma "nuvem de pontos" tridimensional do ambiente circundante.
Webinar – Unlocking the Power of GaN Learn how to incorporate high power density GaN technology into your applications in this webinar.

Related Product Training Modules

eGaN Integrated GaN Power eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
eGaN® FET Reliability Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.