onsemi

1200 V Silicon Carbide (EliteSiC) MOSFETs

onsemi's EliteSiC MOSFETs provide high efficiency, increased power density, and reduced system size

Image of onsemi 1200 V Silicon Carbide (SiC) MOSFET onsemi's 1200 V EliteSiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features
  • 1200 V rated
  • Low ON resistance 
  • Compact chip size ensure low capacitance and gate charge
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Qualified for automotive according to AEC-Q101
Applications
  • PFC
  • OBC
  • Boost inverters
  • PV chargers
  • Automotive DC/DC converters for EV/PHEV
  • Automotive onboard chargers
  • Automotive auxiliary motor drives
  • Solar inverters
  • Network power supplies
  • Server power supplies

Silicon Carbide (SiC) MOSFETs

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
SICFET N-CH 1200V 58A TO247-4NTH4L040N120SC1SICFET N-CH 1200V 58A TO247-4582 - Immediate
6750 - Factory Stock		$19.13Ver detalhes
SICFET N-CH 1200V 103A TO247-3NTHL020N120SC1SICFET N-CH 1200V 103A TO247-3469 - Immediate
4500 - Factory Stock		$31.20Ver detalhes
SICFET N-CH 1200V 17.3A TO247NVH4L160N120SC1SICFET N-CH 1200V 17.3A TO2471194 - Immediate
1800 - Factory Stock		$9.66Ver detalhes
SICFET N-CH 1200V 17.3A TO247NTH4L160N120SC1SICFET N-CH 1200V 17.3A TO247498 - Immediate
3600 - Factory Stock		$8.38Ver detalhes
SICFET N-CH 1200V 60A D2PAK-7NTBG040N120SC1SICFET N-CH 1200V 60A D2PAK-7498 - Immediate
76800 - Factory Stock		$19.21Ver detalhes
TRANS SJT N-CH 1200V 60A D2PAK-7NVBG040N120SC1TRANS SJT N-CH 1200V 60A D2PAK-72871 - Immediate$23.69Ver detalhes
SICFET N-CH 1200V 29A TO247-4NTH4L080N120SC1SICFET N-CH 1200V 29A TO247-4350 - Immediate
900 - Factory Stock		$10.55Ver detalhes
SICFET N-CH 1200V 60A TO247-3NVHL040N120SC1SICFET N-CH 1200V 60A TO247-3504 - Immediate
2250 - Factory Stock		$22.24Ver detalhes
SICFET N-CH 1200V 8.6A/98A D2PAKNTBG020N120SC1SICFET N-CH 1200V 8.6A/98A D2PAK1107 - Immediate$31.45Ver detalhes
MOSFET N-CH 1200V 8.6A/98A D2PAKNVBG020N120SC1MOSFET N-CH 1200V 8.6A/98A D2PAK1067 - Immediate
6400 - Factory Stock		$42.17Ver detalhes
SICFET N-CH 1200V 103A TO247-3NVHL020N120SC1SICFET N-CH 1200V 103A TO247-339 - Immediate$42.26Ver detalhes
SICFET N-CH 1200V 102A TO247NVH4L020N120SC1SICFET N-CH 1200V 102A TO2471266 - Immediate
450 - Factory Stock		$36.47Ver detalhes
SICFET N-CH 1200V 102A TO247NTH4L020N120SC1SICFET N-CH 1200V 102A TO247574 - Immediate
29250 - Factory Stock		$31.32Ver detalhes
SICFET N-CH 1200V 30A D2PAK-7NVBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7567 - Immediate$9.79Ver detalhes
SICFET N-CH 1200V 60A TO247-3NTHL040N120SC1SICFET N-CH 1200V 60A TO247-31807 - Immediate
9900 - Factory Stock		$18.92Ver detalhes
SICFET N-CH 1200V 58A TO247-4NVH4L040N120SC1SICFET N-CH 1200V 58A TO247-4221 - Immediate
35550 - Factory Stock		$19.48Ver detalhes
SICFET N-CH 1200V 19.5A D2PAKNTBG160N120SC1SICFET N-CH 1200V 19.5A D2PAK583 - Immediate$8.08Ver detalhes
SICFET N-CH 1200V 19.5A D2PAKNVBG160N120SC1SICFET N-CH 1200V 19.5A D2PAK1177 - Immediate$10.51Ver detalhes
SICFET N-CH 1200V 17A TO247-3NTHL160N120SC1SICFET N-CH 1200V 17A TO247-3117 - Immediate
2250 - Factory Stock		$8.23Ver detalhes
SICFET N-CH 1200V 30A D2PAK-7NTBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7880 - Immediate$11.44Ver detalhes

Other Wide Bandgap Solutions

ImagemNúmero de peça do fabricanteDescriçãoAvailable QuantityPreçoVer detalhes
DIODE SIL CARB 1700V 25A TO2472NDSH25170ADIODE SIL CARB 1700V 25A TO24720 - Immediate$15.15Ver detalhes
DIODE SIL CARB 1200V 26A TO2472FFSH15120ADIODE SIL CARB 1200V 26A TO2472199 - Immediate$9.89Ver detalhes
DIODE SIC 1.2KV 22.5A TO252AAFFSD08120ADIODE SIC 1.2KV 22.5A TO252AA2358 - Immediate
5000 - Factory Stock		$5.67Ver detalhes
DGTL ISO 5KV 1CH GATE DVR 16SOICNCD57001DWR2GDGTL ISO 5KV 1CH GATE DVR 16SOIC1231 - Immediate$5.26Ver detalhes
DIODE SIL CARBIDE 650V 8A TO263FFSB0665BDIODE SIL CARBIDE 650V 8A TO263627 - Immediate$2.60Ver detalhes
IC GATE DRVR LOW-SIDE 24QFNNCP51705MNTXGIC GATE DRVR LOW-SIDE 24QFN961 - Immediate
114000 - Factory Stock		$4.94Ver detalhes
SICFET N-CH 1200V 44A TO247-3NTHL080N120SC1SICFET N-CH 1200V 44A TO247-30 - ImmediateSee Page for PricingVer detalhes
Updated: 2020-04-07
Published: 2019-05-29

Related Videos

Industrial Automation: Intelligent Technologies for Fully Autonomous Manufacturing
Industrial Automation: Intelligent Technologies for Fully Autonomous Manufacturing

Publish Date: 2024-07-15

End-to-End SiC Manufacturing Capabilities and EliteSiC Family Solutions Advance a Sustainable Future
End-to-End SiC Manufacturing Capabilities and EliteSiC Family Solutions Advance a Sustainable Future

Publish Date: 2024-05-21

Advantages of onsemi's EliteSiC Family
Advantages of onsemi's EliteSiC Family

Publish Date: 2024-04-03

Related Product Highlight

NVHL N-Channel EliteSiC MOSFET onsemi's NVHL N-channel EliteSiC MOSFET provides lightning-fast transitions with superior reliability in a miniature TO-247-3 package.
NVBG EliteSiC MOSFETs onsemi’s NVBG EliteSiC MOSFETs offer high-speed switching and low capacitance in a small package size.
NTH4L EliteSiC N-Channel MOSFETs onsemi’s NTH4L EliteSiC N-channel MOSFETs deliver superior switching performance and high reliability in an innovative, space-saving design.

Related Articles and Blogs

Os semicondutores de ampla banda proibida estão remodelando o mundo dos transportes Todo o setor de transporte está passando por uma transformação radical com soluções para carros elétricos e híbridos e transporte de massa mais limpo.
Semicondutores de ampla banda proibida em aplicações aeroespaciais e de satélite Os semicondutores de ampla banda proibida trazem várias vantagens na conversão de energia, tais como maior densidade de potência e eficiência, reduzindo o tamanho e peso do sistema.
Como tornar a infraestrutura de energia mais eficiente e confiável ao mesmo tempo em que reduz os custos Como usar carbeto de silício (SiC) para tornar os sistemas de infraestrutura de energia mais eficientes e confiáveis, com pegadas de carbono menores e custos mais baixos.

Related Product Training Modules

SiC Gate Drivers onsemi's NCP51561 isolated dual-channel gate drivers are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.