ROHM Semiconductor

SiC Schottky Barrier Diodes

ROHM’s ultra-low switching loss diodes are available in a variety of current ratings and packages

Image of ROHM SiC Schottky Barrier DiodeROHM offers silicon carbide (SiC) Schottky barrier diodes in a variety of current ratings and packages. Some features include low forward voltage drop, high peak current (IFSM) ratings, and low leakage. They are available with one or two diodes per package, and some AEC-Q101 qualified models are available for automotive use. The reverse recovery time (trr) is virtually constant, regardless of temperature (due primarily to device capacitance). It delivers much lower switching loss than silicon fast recovery diodes (SiFRDs).

Features
  • Ultra-fast recovery time
  • Maximum junction temperature: 175°C
  • Packaged devices rated for 650 V or 1200 V
  • Bare dies available up to 1700 V
  • SPICE and thermal models available
  • Continuous forward current ratings of 2 A, 4 A, 5 A, 6 A, 8 A, 10 A, 12 A, 15 A, 20 A, 30 A, and 40 A
  • 3rd generation with low VF
  • Operating temperature range: -40°C to +175°C
Applications
  • Power factor correction circuits
  • Secondary rectifiers
  • Automotive electronics

SiC Diodes

ImagemNúmero de peça do fabricanteDescriçãoTensão - Reversa CC (Vr) (máx.)Available QuantityPreçoVer detalhes
DIODE ARRAY SIC 1200V 10A TO-247SCS220KE2CDIODE ARRAY SIC 1200V 10A TO-2471200 V0 - Immediate$8.87Ver detalhes
DIODE ARRAY SIC 650V 20A TO-247SCS240AE2CDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$8.37Ver detalhes
DIODE ARRAY SIC 1200V 10A TO-247SCS120KE2CDIODE ARRAY SIC 1200V 10A TO-2471200 V0 - Immediate$22.48Ver detalhes
DIODE ARRAY SIC 600V 20A TO-247SCS140AE2CDIODE ARRAY SIC 600V 20A TO-247600 V0 - Immediate$31.36Ver detalhes
DIODE ARRAY SIC 650V 20A TO-247SCS210KE2HRCDIODE ARRAY SIC 650V 20A TO-247650 V0 - Immediate$5.68Ver detalhes

SiC Transistors

ImagemNúmero de peça do fabricanteDescriçãoCaracterística FETAvailable QuantityPreçoVer detalhes
MOSFET 2N-CH 1200V 120A MODULEBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE-2 - Immediate$340.17Ver detalhes
MOSFET 2N-CH 1200V 180A MODULEBSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE-13 - Immediate$482.32Ver detalhes
MOSFET 2N-CH 1200V 300A MODULEBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE-16 - Immediate$671.51Ver detalhes
MOSFET 2N-CH 1700V 250A MODULEBSM250D17P2E004MOSFET 2N-CH 1700V 250A MODULE-8 - Immediate$919.59Ver detalhes
MOSFET 2N-CH 1200V 80A MODULEBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE-61 - Immediate$272.94Ver detalhes

Diodes - Rectifiers - Single

ImagemNúmero de peça do fabricanteDescriçãoTensão - Direta (Vf) (máx.) para IfVelocidadeTempo de recuperação reversa (trr)Available QuantityPreçoVer detalhes
DIODE SIL CARB 1200V 5A TO220ACSCS205KGCDIODE SIL CARB 1200V 5A TO220AC1.6 V @ 5 AZero Recovery Time > 500mA (Io)0 ns0 - Immediate$1.99Ver detalhes
DIODE SIL CARB 1200V 5A TO220ACSCS205KGHRCDIODE SIL CARB 1200V 5A TO220AC1.6 V @ 5 AZero Recovery Time > 500mA (Io)0 ns0 - Immediate$2.80Ver detalhes
DIODE SIL CARB 650V 6A TO220ACSCS206AGCDIODE SIL CARB 650V 6A TO220AC1.55 V @ 6 A0 ns120 µA @ 600 V0 - Immediate$1.33Ver detalhes
DIODE SIL CARB 650V 6A TO220ACSCS206AGHRCDIODE SIL CARB 650V 6A TO220AC1.55 V @ 6 A0 ns120 µA @ 600 V0 - Immediate$1.84Ver detalhes
DIODE SIL CARB 650V 6A TO263ABSCS206AJHRTLLDIODE SIL CARB 650V 6A TO263AB1.55 V @ 6 A0 ns120 µA @ 600 V2746 - Immediate$5.33Ver detalhes

Diodes - Rectifiers - Arrays

ImagemNúmero de peça do fabricanteDescriçãoTensão - Direta (Vf) (máx.) para IfVelocidadeCorrente - Fuga reversa para VrAvailable QuantityPreçoVer detalhes
DIODE ARRAY SIC 650V 20A TO-247SCS210KE2HRCDIODE ARRAY SIC 650V 20A TO-2471.55 V @ 20 ASem tempo de recuperação> 500mA (Io)400 µA @ 600 V0 - Immediate$5.68Ver detalhes
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2CDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 ASem tempo de recuperação> 500mA (Io)0 ns0 - Immediate$4.47Ver detalhes
DIODE ARRAY SIC 650V 10A TO-247SCS220AE2HRCDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 ASem tempo de recuperação> 500mA (Io)0 ns0 - Immediate$5.29Ver detalhes
DIODE ARRAY SIC 1200V 10A TO-247SCS220KE2CDIODE ARRAY SIC 1200V 10A TO-2471.6 V @ 10 ASem tempo de recuperação> 500mA (Io)0 ns0 - Immediate$8.87Ver detalhes
DIODE ARRAY SIC 650V 10A TO-247SCS220KE2HRCDIODE ARRAY SIC 650V 10A TO-2471.55 V @ 10 ASem tempo de recuperação> 500mA (Io)200 µA @ 600 V0 - Immediate$9.85Ver detalhes
Updated: 2020-04-22
Published: 2019-04-30

Related Videos

High accuracy current monitoring contributes to improved application reliability
High accuracy current monitoring contributes to improved application reliability

Publish Date: 2023-06-22

Midnite Solar's Inverters and Charger Systems
Midnite Solar's Inverters and Charger Systems

Publish Date: 2023-02-06

ROHM's SiC Power and Gate Driver Solutions
ROHM's SiC Power and Gate Driver Solutions

Publish Date: 2023-02-06

Related Product Highlight

Industrial Power Solutions ROHM’s reliable portfolio of power solutions includes a variety of applications within the industrial sector from SiC MOSFETs and gate drivers to IPMs and shunt resistors. Learn more at DigiKey today.
SiC Power MOSFETs ROHM’s silicon carbide (SiC) MOSFETs come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V.
AEC-Q101 Silicon Carbide (SiC) Schottky Barrier Diodes ROHM Semiconductor's AEC-Q101 silicon carbide (SiC) Schottky barrier diodes are ideal for a variety of automotive applications.

Related Articles and Blogs

Os semicondutores de ampla banda proibida estão remodelando o mundo dos transportes Todo o setor de transporte está passando por uma transformação radical com soluções para carros elétricos e híbridos e transporte de massa mais limpo.
Semicondutores de ampla banda proibida em aplicações aeroespaciais e de satélite Os semicondutores de ampla banda proibida trazem várias vantagens na conversão de energia, tais como maior densidade de potência e eficiência, reduzindo o tamanho e peso do sistema.
How to Correctly Apply the Right Power Devices to Meet Industrial Power Supply Requirements By correctly applying the right power components for industrial power supplies and converters, designers can ensure the necessary performance and reliability.

Related Product Training Modules

High-Power Devices for EV DC Fast-Charging Stations ROHM's power device offerings for DC fast-charging stations include silicon carbide (SiC), insulated gate bipolar transistor (IGBT), and super junction MOSFETs.
Industrial Motor Products: Part 1 - Power Devices/Gate Drivers ROHM’s power devices and gate drivers are optimized for industrial motor end applications.
Silicon Carbide (SiC) Barrier Diodes Introducing Silicon Carbide advantages over silicon-based products, as well as an explanation of how their unique characteristics can benefit existing power solutions.